ST13007N ST13007Nfp high voltage fast-switching npn power transistors n high voltage capability n npn transistor n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications n electronic ballasts for fluorescent lighting n switch mode power supplies description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. they use a cellular emitter structure to enhance switching speeds. internal schematic diagram march 1999 absolute maximum ratings symbol parameter value unit ST13007N ST13007Nfp v cev collector-emitter voltage (v be = -1.5v) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 8 a i cm collector peak current 16 a i b base current 4 a i bm base peak current 8 a p tot total dissipation at t c 25 o c 80 33 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 to-220fp 1 2 3 ? 1/7
thermal data to-220 to-220fp r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 1.56 62.5 3.8 62.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = rated v cev v ce = rated v cev t c = 100 o c 1 5 ma ma i ebo emitter cut-off current (i c = 0) v eb = 9 v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c = 10 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 8 a i b = 2 a i c = 5 a i b = 1 a t c = 100 o c 1 2 3 3 v v v v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 5 a i b = 1 a t c = 100 o c 1.2 1.6 1.5 v v v h fe * dc current gain i c = 2 a v ce = 5 v group a group b i c = 5 a v ce = 5 v 15 26 5 28 40 30 t s t f inductive load storage time fall time ic = 5 a v cl = 200 v i b1 = 1 a v beoff = -5 v r bb = 0 w 0.6 60 1.5 110 m s ns * pulsed: pulse duration = 300 m s, duty cycle 2 % note : product is pre-selected in dc current gain ( group a and gr oup b). stmicroelectronics reserves the right to ship eit her groups according to production availability. please contact your nearest stmicroelectronics sales office for delivery details. ST13007N / ST13007Nfp 2/7
safe operating areas dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage ST13007N / ST13007Nfp 3/7
inductive fall time inductive storage time reverse biased soa rbsoa and inductive load switching test circuits 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier ST13007N / ST13007Nfp 4/7
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 p011c to-220 mechanical data ST13007N / ST13007Nfp 5/7
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data ST13007N / ST13007Nfp 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a. http://www.st.com . ST13007N / ST13007Nfp 7/7
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